1 TGA2513 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com key features ? frequency range: 2-23 ghz ? 17 db nominal gain ? 16 dbm nominal p1db ? < 2 db midband noise figure ? 0.15 um 3mi phemt technology ? nominal bias: vd = 5v, id = 75 ma ? chip dimensions: 2.09 x 1.35 x 0.10 mm (0.082 x 0.053 x 0.004 in) primary applications ? wideband gain block / lna ? x-ku point to point radio ? if & lo buffer applications product description the triquint TGA2513 is a compact lna/gain block mmic. the lna operates from 2-23 ghz and is designed using triquint?s proven standard 0.15 um gate phemt production process. the TGA2513 provides a nominal 16 dbm of output power at 1 db gain compression with a small signal gain of 17 db. typical noise figure is < 3 db from 2-18 ghz. the TGA2513 is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures, decoys, jammers and phased array systems. the TGA2513 is 100% dc and rf tested on-wafer to ensure performance compliance. lead-free & rohs compliant. evaluation boards are available upon request. measured fixtured data vd = 5v, id= 75ma, vg2 = 2v, typical vg1 = -60mv wideband lna datasheet subject to change without notice
2 TGA2513 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table i maximum ratings 1/ symbol parameter value notes vd positive supply voltage 5 v 2/ v g1 gate 1 supply voltage range -1v to 0 v v g2 gate 2 supply voltage range (vd ? 3) to (vd ? 2) v id positive supply current 151 ma 2/ | i g | gate supply current 10 ma p in input continuous wave power 21 dbm 2 / p d power dissipation 0.76 w 2/, 3 / t ch operating channel temperature 200 c 4 / mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1 / these ratings represent the maximum operable values for this device. 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3 / when operated at this power dissipation with a base plate temperature of 70 c, the median life is 1 e+7 hours. 4 / junction operating temperature will directly affect the device median time to failure (tm). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. table ii dc probe test (t a = 25 c, nominal) symbol parameter minimum maximum unit i dss, q1- q10 saturated drain current -- 216 ma v p, q1-q10 pinch-off voltage -1 0 v v bvgd, q1-q10 breakdown voltage gate- drain -30 -7 v v bvgs, q1-q10 breakdown voltage gate- source -30 -5 v note: q1-q10 is a 720um size fet.
3 TGA2513 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii rf characterization table (t a = 25 c, nominal) vd = 5v, id = 75 ma vg2 = 2v symbol parameter test condition nominal units gain small signal gain f = 2-23 ghz 17 db irl input return loss f = 2-23 ghz 14 db orl output return loss f = 2-23 ghz 14 db nf noise figure f = 3-13 ghz f = 2-18 ghz 2 < 3 db p 1db output power @ 1db gain compression f = 2-23 ghz 16 dbm
4 TGA2513 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iv thermal information parameter test conditions t ch (c) jc (c/w) tm (hrs) jc thermal resistance (channel to backside of carrier) vd = 5 v i d = 75 ma pdiss = 0.375 w 82 32 4.5 e+7 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. median lifetime (tm) vs. channel temperature
5 TGA2513 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured fixtured data vd = 5v, id= 75ma, typi cal vg1 = -60mv, vg2 = 2v
6 TGA2513 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured fixtured data vd = 5v, id= 75ma, typical vg1 = -60mv,vg2 = 2v
7 TGA2513 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured fixtured data vd = 5v, id= 75ma, typi cal vg1 = -60mv, vg2 = 2v
8 TGA2513 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com mechanical characteristics gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. 0.000 (0.000) 0.235 (0.009) 1.242 (0.049) 1.351 (0.053) 0.973 (0.038) 1.210 (0.048) 0.099 (0.004) 0.000 (0.000) 0.095 (0.004) 1.971 (0.078) 2.091 (0.082) 0.103 (0.004) 1.208 (0.048) 1.980 (0.078) 1 2 3 4 5 units: millimeters (inches) thickness: 0.100 (0.004) (reference only) chip edge to bond pad dimensions are shown to center of pad chip size tolerance: +/- 0.051 (0.002) gnd is backside of mmic bond pad #1: rf in 0.100 x 0.125 (0.004 x 0.005) bond pad #2: vg2 0.100 x 0.100 (0.004 x 0.004) bond pad #3: vd 0.100 x 0.125 (0.004 x 0.005) bond pad #4: rf out 0.100 x 0.125 (0.004 x 0.005) bond pad #5: vg1 0.100 x 0.100 (0.004 x 0.004)
9 TGA2513 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. recommended assembly diagram 100 pf 100 pf vg2 vd vg1 rf in rf out
10 TGA2513 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. ? maximum stage temperature is 200 c.
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